HY4008W - 80V 200A N Channel Mosfet - TO247
Product Code: HY4008W
Transistor Type: MOSFET
Control Channel Type: N -Channel
Maximum Power Consumption (Pd): 397 W
Maximum Discharge Source Voltage |Vds|: 80 V
Maximum Gate -Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 200 A
Total Gate Charge (Qg): 195 nC
Rise Time (tr): 18 nS
Drain Source Capacity (Cd): 1029 pF
Maximum Drain Source Open State Resistance (Rds): 0.0035 Ohm
Uses
- Switching application
- Power Management for Inverter Systems
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