IRF1010E - 60V 81A Mosfet - TO220
IRF1010E is an N-channel development MOSFET designed for high-speed switching applications. It also has low ON resistance. Like all other MOSFETs, the IRF1010E is a voltage controlled device and the MOSFET state is decided by the GATE voltage.
- High speed for MEDIUM POWER LOADS when you want a SWITCHING device. As mentioned above, the IRF1010E is specifically designed for high speed switching of medium power loads, so it is quite popular in these areas.
- When you want a low switching device. MOSFET has very low turn ON resistance, resulting in very low dropout in ON condition;
- With low dropout, MOSFET power dissipation will be less. With less power loss, the efficiency of the system will be higher. Therefore, MOSFET is preferred for high efficiency applications.
Uses
| Series |
IRF1010E |
| Vdss |
60V |
| Id |
81A |
| Strength |
170W |
| Rds(on) |
12mΩ |
| Package Type |
TO-220 |
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